Справочник по IGBT транзисторам. Datasheet на транзистор GT100DA60U


ТранзисторGT100DA60U
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A184.000
Ic max, A350.0
P, W577.000
t min,C-40
t max,C175
Rth,C0.26
Vce sat. V1.72
Cies,pF
Coes,pF
Cres,pF
t on, nS162.00
t rise, nS55.00
t off, nS150.00
t fall, nS129.00
Eon,mJ0.350
Eoff,mJ2.080
Etot,mJ2.430
Qg, nC
Qgc,nC
Qge,nC
t rr,nS61.0
Qrr, nC120.00
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GT100DA60U Datasheet Vishay (Siliconix,General Semiconductor)