Справочник по IGBT транзисторам. Datasheet на транзистор VS-EMF050J60U


ТранзисторVS-EMF050J60U
Тип3-level Half bridge
Vce, V600.0
Vge,V20.0
Ic, A88.000
Ic max, A150.0
P, W338.000
t min,C-40
t max,C150
Rth,C0.37
Vce sat. V1.80
Cies,pF9500.0
Coes,pF780.0
Cres,pF116.0
t on, nS182.00
t rise, nS46.00
t off, nS207.00
t fall, nS92.00
Eon,mJ0.110
Eoff,mJ0.760
Etot,mJ0.870
Qg, nC480.0
Qgc,nC160.0
Qge,nC82.0
t rr,nS50.0
Qrr, nC185.00
Возможные корпусаEMIPAK2
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
VS-EMF050J60U Datasheet Vishay (Siliconix,General Semiconductor)