Справочник по IGBT транзисторам. Datasheet на транзистор VS-GA100NA60UP


ТранзисторVS-GA100NA60UP
ТипDual
Vce, V600.0
Vge,V20.0
Ic, A100.000
Ic max, A200.0
P, W250.000
t min,C-55
t max,C150
Rth,C0.50
Vce sat. V1.80
Cies,pF7400.0
Coes,pF730.0
Cres,pF90.0
t on, nS57.00
t rise, nS80.00
t off, nS240.00
t fall, nS120.00
Eon,mJ0.410
Eoff,mJ2.510
Etot,mJ2.920
Qg, nC430.0
Qgc,nC130.0
Qge,nC48.0
t rr,nS90.0
Qrr, nC360.00
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
VS-GA100NA60UP Datasheet Vishay (Siliconix,General Semiconductor)