Справочник по IGBT транзисторам. Datasheet на транзистор 40MT120UHAPBF


Транзистор40MT120UHAPBF
ТипHalf bridge
Vce, V1200.0
Vge,V20.0
Ic, A40.000
Ic max, A160.0
P, W463.000
t min,C-40
t max,C150
Rth,C0.29
Vce sat. V3.36
Cies,pF5521.0
Coes,pF380.0
Cres,pF171.0
t on, nS
t rise, nS
t off, nS
t fall, nS
Eon,mJ1.140
Eoff,mJ1.350
Etot,mJ2.490
Qg, nC399.0
Qgc,nC187.0
Qge,nC43.0
t rr,nS120.0
Qrr, nC
Возможные корпусаMTP
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
40MT120UHAPBF Datasheet Vishay (Siliconix,General Semiconductor)