Справочник по IGBT транзисторам. Datasheet на транзистор GB75DA120UP


ТранзисторGB75DA120UP
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A89.000
Ic max, A200.0
P, W658.000
t min,C-40
t max,C150
Rth,C0.19
Vce sat. V3.60
Cies,pF
Coes,pF
Cres,pF
t on, nS281.00
t rise, nS45.00
t off, nS300.00
t fall, nS126.00
Eon,mJ1.530
Eoff,mJ1.760
Etot,mJ3.290
Qg, nC690.0
Qgc,nC250.0
Qge,nC65.0
t rr,nS142.0
Qrr, nC923.00
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GB75DA120UP Datasheet Vishay (Siliconix,General Semiconductor)