Справочник по IGBT транзисторам. Datasheet на транзистор GT100DA120U


ТранзисторGT100DA120U
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A258.000
Ic max, A450.0
P, W893.000
t min,C-40
t max,C150
Rth,C0.14
Vce sat. V1.73
Cies,pF
Coes,pF
Cres,pF
t on, nS350.00
t rise, nS75.00
t off, nS374.00
t fall, nS493.00
Eon,mJ5.200
Eoff,mJ7.100
Etot,mJ12.300
Qg, nC
Qgc,nC
Qge,nC
t rr,nS164.0
Qrr, nC994.00
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GT100DA120U Datasheet Vishay (Siliconix,General Semiconductor)