Справочник по IGBT транзисторам. Datasheet на транзистор VS-GA100TS120UPBF


ТранзисторVS-GA100TS120UPBF
ТипHalf bridge
Vce, V1200.0
Vge,V20.0
Ic, A182.000
Ic max, A200.0
P, W520.000
t min,C-40
t max,C150
Rth,C0.24
Vce sat. V2.25
Cies,pF18672.0
Coes,pF830.0
Cres,pF161.0
t on, nS570.00
t rise, nS85.00
t off, nS581.00
t fall, nS276.00
Eon,mJ7.600
Eoff,mJ6.800
Etot,mJ14.400
Qg, nC830.0
Qgc,nC275.0
Qge,nC140.0
t rr,nS149.0
Qrr, nC7664.00
Возможные корпусаINT-A-Pak
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
VS-GA100TS120UPBF Datasheet Vishay (Siliconix,General Semiconductor)