Справочник по IGBT транзисторам. Datasheet на транзистор APT100GN60LDQ4G


ТранзисторAPT100GN60LDQ4G
ТипSingle
Vce, V600.0
Vge,V30.0
Ic, A135.000
Ic max, A300.0
P, W625.000
t min,C-55
t max,C175
Rth,C0.21
Vce sat. V1.87
Cies,pF6000.0
Coes,pF560.0
Cres,pF200.0
t on, nS31.00
t rise, nS65.00
t off, nS310.00
t fall, nS55.00
Eon,mJ4.750
Eoff,mJ2.675
Etot,mJ
Qg, nC600.0
Qgc,nC340.0
Qge,nC45.0
t rr,nS160.0
Qrr, nC290.00
Возможные корпусаTO-264
Производитель
  • Microsemi (http://www.microsemi.com)
APT100GN60LDQ4G Datasheet Microsemi