Справочник по IGBT транзисторам. Datasheet на транзистор APT100GN120J


ТранзисторAPT100GN120J
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A70.000
Ic max, A300.0
P, W446.000
t min,C-55
t max,C150
Rth,C0.28
Vce sat. V2.00
Cies,pF6500.0
Coes,pF365.0
Cres,pF280.0
t on, nS50.00
t rise, nS50.00
t off, nS615.00
t fall, nS105.00
Eon,mJ11.000
Eoff,mJ9.500
Etot,mJ
Qg, nC540.0
Qgc,nC295.0
Qge,nC50.0
t rr,nS
Qrr, nC
Возможные корпусаSOT-227
Производитель
  • Microsemi (http://www.microsemi.com)
APT100GN120J Datasheet Microsemi