Справочник по IGBT транзисторам. Datasheet на транзистор APT60GT60JRDQ3


ТранзисторAPT60GT60JRDQ3
ТипSingle
Vce, V600.0
Vge,V30.0
Ic, A48.000
Ic max, A360.0
P, W379.000
t min,C-55
t max,C150
Rth,C0.33
Vce sat. V2.80
Cies,pF3100.0
Coes,pF390.0
Cres,pF185.0
t on, nS17.00
t rise, nS34.00
t off, nS235.00
t fall, nS26.00
Eon,mJ1.265
Eoff,mJ1.200
Etot,mJ
Qg, nC290.0
Qgc,nC130.0
Qge,nC20.0
t rr,nS140.0
Qrr, nC690.00
Возможные корпусаSOT-227
Производитель
  • Microsemi (http://www.microsemi.com)
APT60GT60JRDQ3 Datasheet Microsemi