Справочник по IGBT транзисторам. Datasheet на транзистор APT80GA60S


ТранзисторAPT80GA60S
ТипSingle
Vce, V600.0
Vge,V30.0
Ic, A80.000
Ic max, A240.0
P, W625.000
t min,C-55
t max,C150
Rth,C0.20
Vce sat. V1.90
Cies,pF6390.0
Coes,pF580.0
Cres,pF63.0
t on, nS23.00
t rise, nS27.00
t off, nS158.00
t fall, nS78.00
Eon,mJ0.840
Eoff,mJ0.751
Etot,mJ
Qg, nC230.0
Qgc,nC78.0
Qge,nC40.0
t rr,nS
Qrr, nC
Возможные корпусаTO-268AB
Производитель
  • Microsemi (http://www.microsemi.com)
APT80GA60S Datasheet Microsemi