Справочник по IGBT транзисторам. Datasheet на транзистор APT102GA60L


ТранзисторAPT102GA60L
Тип-
Vce, V600.0
Vge,V30.0
Ic, A102.000
Ic max, A307.0
P, W780.000
t min,C-55
t max,C150
Rth,C0.16
Vce sat. V1.90
Cies,pF8170.0
Coes,pF630.0
Cres,pF78.0
t on, nS28.00
t rise, nS37.00
t off, nS212.00
t fall, nS101.00
Eon,mJ1.354
Eoff,mJ1.614
Etot,mJ
Qg, nC294.0
Qgc,nC106.0
Qge,nC56.0
t rr,nS
Qrr, nC
Возможные корпусаTO-264
Производитель
  • Microsemi (http://www.microsemi.com)
APT102GA60L Datasheet Microsemi