Справочник по IGBT транзисторам. Datasheet на транзистор APT35GA90S


ТранзисторAPT35GA90S
ТипSingle
Vce, V900.0
Vge,V30.0
Ic, A35.000
Ic max, A105.0
P, W290.000
t min,C-55
t max,C150
Rth,C0.43
Vce sat. V2.20
Cies,pF1934.0
Coes,pF173.0
Cres,pF28.0
t on, nS12.00
t rise, nS15.00
t off, nS104.00
t fall, nS86.00
Eon,mJ642.000
Eoff,mJ382.000
Etot,mJ
Qg, nC84.0
Qgc,nC34.0
Qge,nC14.0
t rr,nS
Qrr, nC
Возможные корпусаTO-268AB
Производитель
  • Microsemi (http://www.microsemi.com)
APT35GA90S Datasheet Microsemi