Справочник по IGBT транзисторам. Datasheet на транзистор TGAN25N120ND


ТранзисторTGAN25N120ND
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A50.000
Ic max, A75.0
P, W312.000
t min,C-55
t max,C150
Rth,C0.40
Vce sat. V1.90
Cies,pF4000.0
Coes,pF105.0
Cres,pF72.0
t on, nS57.00
t rise, nS65.00
t off, nS240.00
t fall, nS86.00
Eon,mJ4.150
Eoff,mJ0.870
Etot,mJ5.020
Qg, nC230.0
Qgc,nC70.0
Qge,nC25.0
t rr,nS300.0
Qrr, nC4000.00
Возможные корпусаTO-3PN
Производитель
  • TRinno Technology (http://www.trinnotech.com)
TGAN25N120ND Datasheet TRinno Technology