Справочник по IGBT транзисторам. Datasheet на транзистор TGAN30N120FD


ТранзисторTGAN30N120FD
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A60.000
Ic max, A90.0
P, W329.000
t min,C-55
t max,C150
Rth,C0.38
Vce sat. V2.00
Cies,pF4000.0
Coes,pF105.0
Cres,pF72.0
t on, nS40.00
t rise, nS50.00
t off, nS245.00
t fall, nS70.00
Eon,mJ4.500
Eoff,mJ0.850
Etot,mJ5.350
Qg, nC220.0
Qgc,nC90.0
Qge,nC30.0
t rr,nS300.0
Qrr, nC4400.00
Возможные корпусаTO-3PN
Производитель
  • TRinno Technology (http://www.trinnotech.com)
TGAN30N120FD Datasheet TRinno Technology