Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI7448DP-T1-E3N201.513.400001.9000.0000.0065050.00PQFN 5x6 8L
SI7448DP-T1-GE3N201.513.400001.9000.0000.0065050.00PQFN 5x6 8L
SI7450DPN20020.05.300005.2000.0000.0800020.007.5012.00PowerPAK,SO-8,SOT-669
SI7450DP-T1-E3N2004.53.200001.9000.0000.0800042.00PQFN 5x6 8L
SI7450DP-T1-GE3N2004.53.200001.9000.0000.0800042.00PQFN 5x6 8L
SI7452DP-T1-E3N604.511.500001.9000.0000.00830160.00SOT-669
SI7452DP-T1-GE3N604.511.500001.9000.0000.00830160.00SOT-669
SI7454CDP-T1-GE3N1002.822.0000029.7000.0000.03050580.019.50SOT-669
SI7454DDPN10020.021.0000029.7000.033006.101.802.90SOT-669
SI7454DPN10020.05.0000030.031.01.900-551501.6000.0280024.007.605.4016.0010.0035.0020.0050.0SOT-669,SO-8
SI7454DP-T1-E3N10020.05.0000030.031.01.900-551501.6000.0280024.007.605.4016.0010.0035.0020.0050.0SOT-669
SI7454DP-T1-GE3N1004.05.000001.9000.0000.0340030.00SOT-669
SI7455DP-T1-E3P804.028.0000083.3000.0000.025005160.0155.00SOT-669
SI7455DP-T1-GE3P804.028.0000083.3000.0000.025005160.0155.00SOT-669
SI7456CDP-T1-GE3N1002.827.5000035.7000.0000.02350730.023.00SOT-669
SI7456DDPN10020.027.8000035.7000.023009.702.804.30SOT-669
SI7456DPN10020.05.7000040.045.01.900-551501.5000.0210036.0010.008.6020.0010.0046.0026.0050.0SOT-669,SO-8
SI7456DP-T1-E3N10020.05.7000040.045.01.900-551501.5000.0210036.0010.008.6020.0010.0046.0026.0050.0SOT-669
SI7456DP-T1-GE3N10020.05.7000040.045.01.900-551501.5000.0210036.0010.008.6020.0010.0046.0026.0050.0SOT-669
SI7457DP-T1-E3P1004.028.0000083.0000.0000.042005230.0160.00SOT-669