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Транзистор	PDF	Тип	Vds, V	Vgs, V	Idr, A	Idm, A	Eas,mJ	Ear,mJ	dV/dt,V/ns	P, W	t min, °C	t max, °C	Rth, C	Rds, Ohm	Ciss, pF	Coss, pF	Crss, pF	Qg, nC	Qgs, nC	Qgd, nC	t on, nS	t rise,ns	t off,ns	t fall,ns	t rr, nS	Возможные корпуса
SI8499DB-T2-E1		P	20	12.0	16.00000	20.0				13.000	-55	150	7.000	0.02600	1300.0	250.0	14.50	2.00	4.10	7.00	10.00	55.00	30.00		40.0	Chip
SI8800EDB		N	20	8.0	2.80000					0.900			0.000	0.08000			3.20	0.40	0.50							MICRO FOOT 0.8
SI8800EDB-T2-E1		N	20	1.0						0.500			0.000	0.08000			8.30									Chip
SI8802DB		N	8	5.0	3.50000					0.900			0.000	0.05400			4.30	0.40	0.70							MICRO FOOT 0.8
SI8805EDB		P	8	5.0	3.10000					0.900			0.000	0.06800			6.70	0.70	1.80							MICRO FOOT 0.8
SI8806DB		N	12	8.0	3.90000					0.900				0.04300			6.50	0.90	1.60							MICRO FOOT 0.8
SI8808DB		N	30	8.0	2.50000					0.900				0.09500			3.70	0.50	0.50							MICRO FOOT 0.8
SI8809EDB		P	20	8.0	2.60000					0.900			0.000	0.09000			6.00	0.80	1.90							MICRO FOOT 0.8
SI8812DB		N	20	8.0	3.20000					0.900				0.05900			6.30	0.80	1.40							MICRO FOOT 0.8
SI8817DB		P	20	8.0	2.90000					0.900				0.07600			7.50	1.00	1.90							MICRO FOOT 0.8
SI8822		N * 2	20	12.0	7.00000					1.500				16.50000	630.0											TSSOP-8
SI9407BDY		P	60	20.0	4.70000					5.000			0.000	0.12000			14.50	2.20	3.70							SO-8
SI9407BDY-T1-E3		P	60	3.0	4.70000					5.000			0.000	0.12000	600.0		22.00									SO-8
SI9407BDY-T1-GE3		P	60	3.0	4.70000					5.000			0.000	0.12000	600.0		22.00									SO-8
SI9410BDY-T1-E3		N	30	3.0	6.20000					1.500			0.000	0.02400			23.00									SO-8
SI9410BDY-T1-GE3		N	30	3.0	6.20000					1.500			0.000	0.02400			23.00									SO-8
SI9410DY		N	30	1.0						2.500			0.000	0.03000			50.00									SO-8
SI9424BDY-T1-E3		P	20	0.9	5.60000					1.250			0.000	0.02500			40.00									SO-8
SI9424BDY-T1-GE3		P	20	0.9	5.60000					1.250			0.000	0.02500			40.00									SO-8
SI9424DY		P	20	1.5	8.00000					1.000			0.000	0.02400	2260.0		33.00									SO-8