Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
IRF6655TRPBFN1004.84.200002.2000.0000.06200530.011.70DirectFET
IRF6662N10020.08.3000089.0001501.4000.0220022.006.80DirectFET
IRF6662TR1PBFN1004.98.300002.8000.0000.022001360.031.00DirectFET
IRF6662TRPBFN1004.98.300002.8000.0000.022001360.031.00DirectFET
IRF6665N10020.04.2000042.0001503.0000.06200530.08.702.80DirectFET
IRF6665TR1N1005.04.200002.2000.0000.06200530.013.00DirectFET
IRF6665TR1PBFN1005.04.200002.2000.0000.06200530.013.00DirectFET
IRF6665TRPBFN1005.04.200002.2000.0000.06200530.013.00DirectFET
IRF6668N8020.055.0000089.0001501.4000.0150022.007.80DirectFET
IRF6668TR1N804.955.000002.8000.0000.015001320.031.00DirectFET
IRF6668TR1PBFN804.955.000002.8000.0000.015001320.031.00DirectFET
IRF6668TRPBFN804.955.000002.8000.0000.015001320.031.00DirectFET
IRF6674N6020.067.0000089.0001501.4000.0110024.008.30DirectFET
IRF6674TR1PBFN604.913.400003.6000.0000.011001350.036.00DirectFET
IRF6674TRPBFN604.913.400003.6000.0000.011001350.036.00DirectFET
IRF6678N3020.030.0000089.0001501.4000.002205640.043.0015.00DirectFET
IRF6678TR1N302.330.000002.8000.0000.002205640.065.00DirectFET
IRF6678TR1PBFN302.330.000002.8000.0000.002205640.065.00DirectFET
IRF6678TRPBFN302.330.000002.8000.0000.002205640.065.00DirectFET
IRF6691N2012.032.000002.0001500.0000.002506580.047.0015.00DirectFET