Справочник по полевым транзисторам. Datasheet на транзистор IPP35CN10NG


ТранзисторIPP35CN10NG
ТипN
Vds, V100
Vgs, V20.0
Idr, A27.00000
Idm, A108.0
Eas,mJ47.0
Ear,mJ
dV/dt,V/ns
P, W58.000
t min, °C-55
t max, °C175
Rth, C2.600
Rds, Ohm0.02600
Ciss, pF1180.0
Coss, pF175.0
Crss, pF13.000
Qg, nC18.00
Qgs, nC7.00
Qgd, nC4.00
t on, nS11.00
t rise,ns21.00
t off,ns17.00
t fall,ns4.00
t rr, nS77.0
Возможные корпусаTO-220
Производитель
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
  • Infineon (Siemens) (http://infineon.com)
IPP35CN10NG Datasheet Infineon (Siemens)