Справочник по полевым транзисторам. Datasheet на транзистор AP1003BST


ТранзисторAP1003BST
ТипN
Vds, V30
Vgs, V20.0
Idr, A75.00000
Idm, A150.0
Eas,mJ28.8
Ear,mJ
dV/dt,V/ns
P, W42.000
t min, °C-40
t max, °C150
Rth, C3.000
Rds, Ohm0.00360
Ciss, pF1155.0
Coss, pF400.0
Crss, pF170.000
Qg, nC12.00
Qgs, nC3.00
Qgd, nC6.00
t on, nS10.00
t rise,ns41.00
t off,ns22.00
t fall,ns7.60
t rr, nS32.0
Возможные корпусаChip
Производитель
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
AP1003BST Datasheet APEC(Advanced Power Electronics Corp.)