Справочник по полевым транзисторам. Datasheet на транзистор AP1001BSQ


ТранзисторAP1001BSQ
ТипN
Vds, V30
Vgs, V20.0
Idr, A59.00000
Idm, A120.0
Eas,mJ28.8
Ear,mJ
dV/dt,V/ns
P, W34.000
t min, °C-40
t max, °C150
Rth, C3.700
Rds, Ohm0.00450
Ciss, pF810.0
Coss, pF295.0
Crss, pF150.000
Qg, nC9.00
Qgs, nC2.50
Qgd, nC5.00
t on, nS9.00
t rise,ns55.00
t off,ns20.00
t fall,ns5.60
t rr, nS28.0
Возможные корпусаChip
Производитель
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
AP1001BSQ Datasheet APEC(Advanced Power Electronics Corp.)