Справочник по полевым транзисторам. Datasheet на транзистор SIR878DP-T1-GE3


ТранзисторSIR878DP-T1-GE3
ТипN
Vds, V100
Vgs, V20.0
Idr, A40.00000
Idm, A80.0
Eas,mJ20.0
Ear,mJ
dV/dt,V/ns
P, W44.500
t min, °C-55
t max, °C150
Rth, C2.100
Rds, Ohm0.01140
Ciss, pF1250.0
Coss, pF680.0
Crss, pF50.000
Qg, nC13.60
Qgs, nC3.70
Qgd, nC6.40
t on, nS9.00
t rise,ns11.00
t off,ns28.00
t fall,ns10.00
t rr, nS45.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SIR878DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)