Справочник по полевым транзисторам. Datasheet на транзистор SQD50N04-09H-GE3


ТранзисторSQD50N04-09H-GE3
ТипN
Vds, V40
Vgs, V20.0
Idr, A50.00000
Idm, A200.0
Eas,mJ76.0
Ear,mJ
dV/dt,V/ns
P, W83.000
t min, °C-55
t max, °C175
Rth, C1.800
Rds, Ohm0.00680
Ciss, pF3390.0
Coss, pF408.0
Crss, pF164.000
Qg, nC51.00
Qgs, nC19.40
Qgd, nC8.50
t on, nS15.00
t rise,ns14.00
t off,ns23.00
t fall,ns8.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD50N04-09H-GE3 Datasheet Vishay (Siliconix,General Semiconductor)