Справочник по полевым транзисторам. Datasheet на транзистор SIR882DP-T1-GE3


ТранзисторSIR882DP-T1-GE3
ТипN
Vds, V100
Vgs, V20.0
Idr, A60.00000
Idm, A80.0
Eas,mJ45.0
Ear,mJ
dV/dt,V/ns
P, W83.000
t min, °C-55
t max, °C150
Rth, C1.000
Rds, Ohm0.00710
Ciss, pF1930.0
Coss, pF1210.0
Crss, pF65.000
Qg, nC18.30
Qgs, nC5.50
Qgd, nC7.80
t on, nS12.00
t rise,ns12.00
t off,ns36.00
t fall,ns9.00
t rr, nS64.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SIR882DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)