Справочник по полевым транзисторам. Datasheet на транзистор SI7772DP-T1-GE3


ТранзисторSI7772DP-T1-GE3
ТипN
Vds, V30
Vgs, V20.0
Idr, A35.60000
Idm, A50.0
Eas,mJ11.3
Ear,mJ
dV/dt,V/ns
P, W29.800
t min, °C-55
t max, °C150
Rth, C3.500
Rds, Ohm0.01050
Ciss, pF1084.0
Coss, pF200.0
Crss, pF77.000
Qg, nC8.30
Qgs, nC2.80
Qgd, nC2.00
t on, nS8.00
t rise,ns11.00
t off,ns17.00
t fall,ns9.00
t rr, nS17.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SI7772DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)