Справочник по полевым транзисторам. Datasheet на транзистор SIR788DP-T1-GE3


ТранзисторSIR788DP-T1-GE3
ТипN
Vds, V30
Vgs, V20.0
Idr, A60.00000
Idm, A100.0
Eas,mJ31.0
Ear,mJ
dV/dt,V/ns
P, W48.000
t min, °C-55
t max, °C150
Rth, C2.100
Rds, Ohm0.00270
Ciss, pF2873.0
Coss, pF555.0
Crss, pF246.000
Qg, nC24.00
Qgs, nC6.80
Qgd, nC7.80
t on, nS9.00
t rise,ns11.00
t off,ns29.00
t fall,ns9.00
t rr, nS23.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SIR788DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)