| Транзистор | FQP50N06 |
| Тип | N |
| Vds, V | 60 |
| Vgs, V | 25.0 |
| Idr, A | 50.00000 |
| Idm, A | 200.0 |
| Eas,mJ | 490.0 |
| Ear,mJ | 12.0 |
| dV/dt,V/ns | 7.00 |
| P, W | 120.000 |
| t min, °C | -55 |
| t max, °C | 175 |
| Rth, C | 1.240 |
| Rds, Ohm | 0.01800 |
| Ciss, pF | 1180.0 |
| Coss, pF | 440.0 |
| Crss, pF | 65.000 |
| Qg, nC | 31.00 |
| Qgs, nC | 8.00 |
| Qgd, nC | 13.00 |
| t on, nS | 15.00 |
| t rise,ns | 105.00 |
| t off,ns | 60.00 |
| t fall,ns | 65.00 |
| t rr, nS | 52.0 |
| Возможные корпуса | TO-220 | | Производитель | - FairChild (Samsung) (http://www.fairchildsemi.com)
- Shaoguang (MagnaChip) (http://www.shaoguang.com.cn)
- TGS Tiger electronic (http://www.tgselec.com/)
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