Справочник по полевым транзисторам. Datasheet на транзистор SQJ840EP-T1-GE3


ТранзисторSQJ840EP-T1-GE3
ТипN
Vds, V30
Vgs, V20.0
Idr, A30.00000
Idm, A120.0
Eas,mJ26.0
Ear,mJ
dV/dt,V/ns
P, W46.000
t min, °C-55
t max, °C175
Rth, C3.200
Rds, Ohm0.00750
Ciss, pF1550.0
Coss, pF575.0
Crss, pF210.000
Qg, nC25.30
Qgs, nC3.70
Qgd, nC5.40
t on, nS11.00
t rise,ns11.00
t off,ns28.00
t fall,ns17.00
t rr, nS
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQJ840EP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)