Справочник по полевым транзисторам. Datasheet на транзистор SQD50N03-06P-GE3


ТранзисторSQD50N03-06P-GE3
ТипN
Vds, V30
Vgs, V20.0
Idr, A50.00000
Idm, A200.0
Eas,mJ101.0
Ear,mJ
dV/dt,V/ns
P, W83.000
t min, °C-55
t max, °C175
Rth, C1.800
Rds, Ohm0.00470
Ciss, pF3222.0
Coss, pF563.0
Crss, pF241.000
Qg, nC25.20
Qgs, nC9.10
Qgd, nC9.40
t on, nS10.00
t rise,ns10.00
t off,ns26.00
t fall,ns9.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD50N03-06P-GE3 Datasheet Vishay (Siliconix,General Semiconductor)