Справочник по полевым транзисторам. Datasheet на транзистор SIRA00DP-T1-GE3


ТранзисторSIRA00DP-T1-GE3
ТипN
Vds, V30
Vgs, V16.0
Idr, A100.00000
Idm, A400.0
Eas,mJ125.0
Ear,mJ
dV/dt,V/ns
P, W104.000
t min, °C-55
t max, °C150
Rth, C0.900
Rds, Ohm0.00083
Ciss, pF11700.0
Coss, pF3320.0
Crss, pF360.000
Qg, nC66.00
Qgs, nC26.00
Qgd, nC8.60
t on, nS18.00
t rise,ns14.00
t off,ns67.00
t fall,ns11.00
t rr, nS70.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SIRA00DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)