Справочник по полевым транзисторам. Datasheet на транзистор SQJ850EP-T1-GE3


ТранзисторSQJ850EP-T1-GE3
ТипN
Vds, V60
Vgs, V20.0
Idr, A24.00000
Idm, A96.0
Eas,mJ11.0
Ear,mJ
dV/dt,V/ns
P, W45.000
t min, °C-55
t max, °C175
Rth, C3.300
Rds, Ohm0.01900
Ciss, pF980.0
Coss, pF170.0
Crss, pF70.000
Qg, nC20.00
Qgs, nC2.90
Qgd, nC4.40
t on, nS21.00
t rise,ns15.00
t off,ns22.00
t fall,ns8.00
t rr, nS
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQJ850EP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)