Справочник по полевым транзисторам. Datasheet на транзистор SQD50P04-09L-GE3


ТранзисторSQD50P04-09L-GE3
ТипP
Vds, V40
Vgs, V20.0
Idr, A50.00000
Idm, A200.0
Eas,mJ125.0
Ear,mJ
dV/dt,V/ns
P, W136.000
t min, °C-55
t max, °C175
Rth, C1.100
Rds, Ohm0.00760
Ciss, pF5339.0
Coss, pF852.0
Crss, pF681.000
Qg, nC103.00
Qgs, nC24.00
Qgd, nC16.00
t on, nS13.00
t rise,ns15.00
t off,ns61.00
t fall,ns19.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD50P04-09L-GE3 Datasheet Vishay (Siliconix,General Semiconductor)