Справочник по полевым транзисторам. Datasheet на транзистор SQD35N05-26L-GE3


ТранзисторSQD35N05-26L-GE3
ТипN
Vds, V55
Vgs, V20.0
Idr, A30.00000
Idm, A120.0
Eas,mJ20.0
Ear,mJ
dV/dt,V/ns
P, W50.000
t min, °C-55
t max, °C175
Rth, C3.000
Rds, Ohm0.01600
Ciss, pF938.0
Coss, pF203.0
Crss, pF86.000
Qg, nC12.00
Qgs, nC4.10
Qgd, nC4.80
t on, nS7.00
t rise,ns10.00
t off,ns18.00
t fall,ns5.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD35N05-26L-GE3 Datasheet Vishay (Siliconix,General Semiconductor)