Справочник по полевым транзисторам. Datasheet на транзистор SQD50N03-09-GE3


ТранзисторSQD50N03-09-GE3
ТипN
Vds, V30
Vgs, V20.0
Idr, A50.00000
Idm, A200.0
Eas,mJ76.0
Ear,mJ
dV/dt,V/ns
P, W71.000
t min, °C-55
t max, °C175
Rth, C2.100
Rds, Ohm0.00600
Ciss, pF2306.0
Coss, pF570.0
Crss, pF245.000
Qg, nC39.50
Qgs, nC6.40
Qgd, nC6.00
t on, nS10.00
t rise,ns10.00
t off,ns22.00
t fall,ns8.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD50N03-09-GE3 Datasheet Vishay (Siliconix,General Semiconductor)