Справочник по полевым транзисторам. Datasheet на транзистор SQD50N06-09L-GE3


ТранзисторSQD50N06-09L-GE3
ТипN
Vds, V60
Vgs, V20.0
Idr, A50.00000
Idm, A200.0
Eas,mJ115.0
Ear,mJ
dV/dt,V/ns
P, W136.000
t min, °C-55
t max, °C175
Rth, C1.100
Rds, Ohm0.00710
Ciss, pF2451.0
Coss, pF435.0
Crss, pF192.000
Qg, nC48.00
Qgs, nC7.10
Qgd, nC13.50
t on, nS10.00
t rise,ns11.00
t off,ns27.00
t fall,ns8.00
t rr, nS
Возможные корпусаTO-252
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQD50N06-09L-GE3 Datasheet Vishay (Siliconix,General Semiconductor)