Справочник по полевым транзисторам. Datasheet на транзистор IRF840B


ТранзисторIRF840B
ТипN
Vds, V500
Vgs, V30.0
Idr, A8.00000
Idm, A32.0
Eas,mJ320.0
Ear,mJ13.4
dV/dt,V/ns3.50
P, W134.000
t min, °C-55
t max, °C150
Rth, C0.930
Rds, Ohm0.65000
Ciss, pF1400.0
Coss, pF145.0
Crss, pF35.000
Qg, nC41.00
Qgs, nC6.50
Qgd, nC17.00
t on, nS22.00
t rise,ns65.00
t off,ns125.00
t fall,ns75.00
t rr, nS390.0
Возможные корпусаTO-220,TO-220AB
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
IRF840B Datasheet Vishay (Siliconix,General Semiconductor)
IRF840B Datasheet FairChild (Samsung)