Справочник по полевым транзисторам. Datasheet на транзистор FMI12N50E


ТранзисторFMI12N50E
ТипN
Vds, V500
Vgs, V30.0
Idr, A12.00000
Idm, A
Eas,mJ400.0
Ear,mJ16.5
dV/dt,V/ns6.50
P, W165.000
t min, °C
t max, °C
Rth, C0.760
Rds, Ohm0.44400
Ciss, pF1600.0
Coss, pF160.0
Crss, pF11.500
Qg, nC47.00
Qgs, nC10.50
Qgd, nC14.00
t on, nS20.00
t rise,ns9.00
t off,ns100.00
t fall,ns18.00
t rr, nS360.0
Возможные корпусаT-PAK
Производитель
  • Fuji Electronics (http://www.fujielectric.com)
FMI12N50E Datasheet Fuji Electronics