Справочник по полевым транзисторам. Datasheet на транзистор MTP10N10


ТранзисторMTP10N10
ТипN
Vds, V80
Vgs, V20.0
Idr, A10.00000
Idm, A32.0
Eas,mJ
Ear,mJ
dV/dt,V/ns
P, W75.000
t min, °C-55
t max, °C150
Rth, C1.670
Rds, Ohm0.33000
Ciss, pF600.0
Coss, pF400.0
Crss, pF100.000
Qg, nC15.00
Qgs, nC
Qgd, nC
t on, nS40.00
t rise,ns70.00
t off,ns100.00
t fall,ns70.00
t rr, nS280.0
Возможные корпусаTO-220AB
Производитель
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • International Rectifier (http://www.irf.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
MTP10N10 Datasheet International Rectifier