Справочник по полевым транзисторам. Datasheet на транзистор APT1001R3BN


ТранзисторAPT1001R3BN
ТипN
Vds, V1000
Vgs, V30.0
Idr, A10.00000
Idm, A40.0
Eas,mJ
Ear,mJ
dV/dt,V/ns
P, W310.000
t min, °C-55
t max, °C150
Rth, C0.400
Rds, Ohm1.30000
Ciss, pF2460.0
Coss, pF360.0
Crss, pF105.000
Qg, nC90.00
Qgs, nC9.30
Qgd, nC47.00
t on, nS15.00
t rise,ns16.00
t off,ns64.00
t fall,ns24.00
t rr, nS636.0
Возможные корпусаTO-247
Производитель
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • Microsemi (http://www.microsemi.com)
APT1001R3BN Datasheet Microsemi
APT1001R3BN Datasheet Microsemi