| Транзистор | BUZ11 |
| Тип | N |
| Vds, V | 50 |
| Vgs, V | 20.0 |
| Idr, A | 36.00000 |
| Idm, A | 144.0 |
| Eas,mJ | 240.0 |
| Ear,mJ | 60.0 |
| dV/dt,V/ns | |
| P, W | 120.000 |
| t min, °C | -65 |
| t max, °C | 175 |
| Rth, C | 1.250 |
| Rds, Ohm | 0.03000 |
| Ciss, pF | 1130.0 |
| Coss, pF | 480.0 |
| Crss, pF | 140.000 |
| Qg, nC | |
| Qgs, nC | |
| Qgd, nC | |
| t on, nS | 40.00 |
| t rise,ns | 145.00 |
| t off,ns | 220.00 |
| t fall,ns | 135.00 |
| t rr, nS | 90.0 |
| Возможные корпуса | TO-220AB,TO-220 | | Производитель | - Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- STMicroelectronics (http://www.st.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
| | |
