Справочник по полевым транзисторам. Datasheet на транзистор IRF630


ТранзисторIRF630
ТипN
Vds, V200
Vgs, V20.0
Idr, A10.00000
Idm, A40.0
Eas,mJ60.0
Ear,mJ15.0
dV/dt,V/ns
P, W100.000
t min, °C-65
t max, °C150
Rth, C1.250
Rds, Ohm0.25000
Ciss, pF1100.0
Coss, pF160.0
Crss, pF30.000
Qg, nC40.00
Qgs, nC8.00
Qgd, nC10.00
t on, nS40.00
t rise,ns80.00
t off,ns39.00
t fall,ns30.00
t rr, nS300.0
Возможные корпусаTO-220AB
Производитель
  • STMicroelectronics (http://www.st.com)
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
  • TAITRON (www.taitroncomponents.com)
  • Intersil (http://www.intersil.com)
  • HFZT Electronic co. (http://hfzt.net)
  • COMSET Semiconductor (http://comsetsemi.com)
  • GSME (http://www.gsme.com.cn)
  • Foshan Blue Rocket Electronics (http://www.fsbrec.com)
  • Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
  • CJ-Elec (http://www.cj-elec.com)
IRF630 Datasheet STMicroelectronics
IRF630 Datasheet Vishay (Siliconix,General Semiconductor)
IRF630 Datasheet STMicroelectronics
IRF630 Datasheet FairChild (Samsung)
IRF630 Datasheet TAITRON
IRF630 Datasheet Intersil