| Транзистор | 2N6661 |
| Тип | N |
| Vds, V | 90 |
| Vgs, V | 20.0 |
| Idr, A | 0.84000 |
| Idm, A | 3.0 |
| Eas,mJ | |
| Ear,mJ | |
| dV/dt,V/ns | |
| P, W | 6.250 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, C | 20.000 |
| Rds, Ohm | 3.60000 |
| Ciss, pF | 35.0 |
| Coss, pF | 15.0 |
| Crss, pF | 2.000 |
| Qg, nC | |
| Qgs, nC | |
| Qgd, nC | |
| t on, nS | 6.00 |
| t rise,ns | |
| t off,ns | 8.00 |
| t fall,ns | |
| t rr, nS | 350.0 |
| Возможные корпуса | TO-205AD | | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- Supertex (http://www.supertex.com)
- Microchip (http://www.microchip.com)
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