| Транзистор | 2N6766 |
| Тип | N |
| Vds, V | 200 |
| Vgs, V | 20.0 |
| Idr, A | 30.00000 |
| Idm, A | 120.0 |
| Eas,mJ | 200.0 |
| Ear,mJ | 15.0 |
| dV/dt,V/ns | 5.00 |
| P, W | 150.000 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, C | 0.120 |
| Rds, Ohm | 0.08500 |
| Ciss, pF | 3500.0 |
| Coss, pF | 700.0 |
| Crss, pF | 110.000 |
| Qg, nC | 115.00 |
| Qgs, nC | 22.00 |
| Qgd, nC | 60.00 |
| t on, nS | 35.00 |
| t rise,ns | 190.00 |
| t off,ns | 170.00 |
| t fall,ns | 130.00 |
| t rr, nS | 950.0 |
| Возможные корпуса | TO-204,TO-254 | | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Microsemi (http://www.microsemi.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
| | |
