| Транзистор | 2N6767 |
| Тип | N |
| Vds, V | 350 |
| Vgs, V | 20.0 |
| Idr, A | 12.00000 |
| Idm, A | 20.0 |
| Eas,mJ | |
| Ear,mJ | |
| dV/dt,V/ns | |
| P, W | 150.000 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, C | 0.830 |
| Rds, Ohm | 0.40000 |
| Ciss, pF | 3000.0 |
| Coss, pF | 600.0 |
| Crss, pF | 200.000 |
| Qg, nC | 120.00 |
| Qgs, nC | |
| Qgd, nC | |
| t on, nS | 35.00 |
| t rise,ns | 65.00 |
| t off,ns | 150.00 |
| t fall,ns | 75.00 |
| t rr, nS | 1000.0 |
| Возможные корпуса | TO-204 | | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
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