| Транзистор | 2N6768 |
| Тип | N |
| Vds, V | 400 |
| Vgs, V | 20.0 |
| Idr, A | 14.00000 |
| Idm, A | 56.0 |
| Eas,mJ | 11.3 |
| Ear,mJ | 15.0 |
| dV/dt,V/ns | 4.00 |
| P, W | 150.000 |
| t min, °C | -55 |
| t max, °C | 150 |
| Rth, C | 0.830 |
| Rds, Ohm | 0.30000 |
| Ciss, pF | 2600.0 |
| Coss, pF | 680.0 |
| Crss, pF | 250.000 |
| Qg, nC | 110.00 |
| Qgs, nC | 18.00 |
| Qgd, nC | 65.00 |
| t on, nS | 35.00 |
| t rise,ns | 190.00 |
| t off,ns | 170.00 |
| t fall,ns | 130.00 |
| t rr, nS | 1200.0 |
| Возможные корпуса | TO-204,TO-254 | | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Microsemi (http://www.microsemi.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
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