Транзистор | 2N6796 |
Тип | N |
Vds, V | 100 |
Vgs, V | 20.0 |
Idr, A | 8.00000 |
Idm, A | 32.0 |
Eas,mJ | 75.0 |
Ear,mJ | |
dV/dt,V/ns | 5.50 |
P, W | 25.000 |
t min, °C | -55 |
t max, °C | 150 |
Rth, C | 5.000 |
Rds, Ohm | 0.18000 |
Ciss, pF | 650.0 |
Coss, pF | 240.0 |
Crss, pF | 44.000 |
Qg, nC | 28.50 |
Qgs, nC | 6.30 |
Qgd, nC | 16.60 |
t on, nS | 30.00 |
t rise,ns | 75.00 |
t off,ns | 40.00 |
t fall,ns | 45.00 |
t rr, nS | 300.0 |
Возможные корпуса | TO-205AD,TO-205AF | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Microsemi (http://www.microsemi.com)
- International Rectifier (http://www.irf.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- Others ()
- Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
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