Транзистор | IRF430 |
Тип | N |
Vds, V | 500 |
Vgs, V | 20.0 |
Idr, A | 4.50000 |
Idm, A | |
Eas,mJ | 1.1 |
Ear,mJ | |
dV/dt,V/ns | 3.50 |
P, W | 75.000 |
t min, °C | |
t max, °C | |
Rth, C | 1.670 |
Rds, Ohm | 1.50000 |
Ciss, pF | 610.0 |
Coss, pF | 135.0 |
Crss, pF | 65.000 |
Qg, nC | 40.00 |
Qgs, nC | 6.00 |
Qgd, nC | 20.00 |
t on, nS | 30.00 |
t rise,ns | 40.00 |
t off,ns | 80.00 |
t fall,ns | 30.00 |
t rr, nS | 900.0 |
Возможные корпуса | TO-204 | Производитель | - SemeLab (TT Electronics,MAGNATEC) (http://semelab-tt.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- Others ()
- International Rectifier (http://www.irf.com)
| | |