Справочник по полевым транзисторам. Datasheet на транзистор IRFI830G


ТранзисторIRFI830G
ТипN
Vds, V500
Vgs, V20.0
Idr, A3.10000
Idm, A
Eas,mJ180.0
Ear,mJ3.5
dV/dt,V/ns3.50
P, W35.000
t min, °C
t max, °C
Rth, C3.600
Rds, Ohm1.50000
Ciss, pF610.0
Coss, pF160.0
Crss, pF68.000
Qg, nC38.00
Qgs, nC5.00
Qgd, nC22.00
t on, nS8.20
t rise,ns16.00
t off,ns42.00
t fall,ns16.00
t rr, nS320.0
Возможные корпусаTO-220F
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
IRFI830G Datasheet Vishay (Siliconix,General Semiconductor)