Транзистор | IRF640 |
Тип | N |
Vds, V | 200 |
Vgs, V | 20.0 |
Idr, A | 18.00000 |
Idm, A | 72.0 |
Eas,mJ | 280.0 |
Ear,mJ | 10.0 |
dV/dt,V/ns | 5.00 |
P, W | 125.000 |
t min, °C | -55 |
t max, °C | 150 |
Rth, C | 1.000 |
Rds, Ohm | 0.15000 |
Ciss, pF | 1200.0 |
Coss, pF | 20.0 |
Crss, pF | 60.000 |
Qg, nC | 55.00 |
Qgs, nC | 10.00 |
Qgd, nC | 21.00 |
t on, nS | 13.00 |
t rise,ns | 27.00 |
t off,ns | 21.00 |
t fall,ns | 25.00 |
t rr, nS | 240.0 |
Возможные корпуса | TO-220AB | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- WEITRON (http://weitron.com.tw)
- STMicroelectronics (http://www.st.com)
- HFZT Electronic co. (http://hfzt.net)
- CJ-Elec (http://www.cj-elec.com)
- COMSET Semiconductor (http://comsetsemi.com)
- Others ()
- GSME (http://www.gsme.com.cn)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
- Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
| | |