Справочник по полевым транзисторам. Datasheet на транзистор IRF730


ТранзисторIRF730
ТипN
Vds, V400
Vgs, V20.0
Idr, A5.50000
Idm, A22.0
Eas,mJ300.0
Ear,mJ7.4
dV/dt,V/ns3.00
P, W100.000
t min, °C-65
t max, °C150
Rth, C1.250
Rds, Ohm0.75000
Ciss, pF530.0
Coss, pF90.0
Crss, pF15.000
Qg, nC18.00
Qgs, nC4.00
Qgd, nC8.50
t on, nS10.00
t rise,ns11.00
t off,ns15.00
t fall,ns19.00
t rr, nS280.0
Возможные корпусаTO-220AB
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
  • STMicroelectronics (http://www.st.com)
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
  • Others ()
  • HFZT Electronic co. (http://hfzt.net)
  • CJ-Elec (http://www.cj-elec.com)
  • GSME (http://www.gsme.com.cn)
  • Foshan Blue Rocket Electronics (http://www.fsbrec.com)
  • Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
IRF730 Datasheet Vishay (Siliconix,General Semiconductor)
IRF730 Datasheet FairChild (Samsung)
IRF730 Datasheet STMicroelectronics
IRF730 Datasheet Others